| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,000 pcs
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25000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NID5003NT4G is a self-protected N-channel Power MOSFET from the HDPlus series. It utilizes advanced MOSFET technology to achieve low on-resistance while integrating smart features for protection. This device offers a drain-source voltage (VDSS) of 42V and a continuous drain current (ID) of 20A, internally limited.
Key features include integrated thermal shutdown with automatic restart and current limit for short circuit protection. It also incorporates an integrated Drain-to-Gate Clamp for avalanche energy withstand and overvoltage transient protection, along with Gate-to-Source Clamp for ESD protection. The MOSFET has a typical Rds On of 42 mOhm at 10V.
Packaged in a DPAK (TO-252-3) surface mount package, the NID5003NT4G operates over a temperature range of -55°C to 150°C. It is suitable for applications requiring robust power switching with built-in protection mechanisms.
This device is designed for general-purpose switching and power distribution, offering features like slew rate control for low noise switching. The output configuration is low-side, and the interface is On/Off.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
42 Vdc (internally clamped).
20 A (internally limited).
DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63) surface mount.
-55°C to 150°C.
Current limiting (fixed), over-temperature, and over-voltage protection.
42 mOhm at 10 V gate drive.
600 mJ (VDD=25V, VGS=5V, IL=3.2A, L=120mH, RG=25Ω).