NGTG15N120FL2WG The On Semiconductor NGTG15N120FL2WG is a Trench Field Stop II IGBT transistor designed for demanding switching applications. It offers a 1200V collector-emitter voltage and 30A current handling capability.
Mfr Part #:

NGTG15N120FL2WG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NGTG15N120FL2WG is a Trench Field Stop II IGBT transistor designed for demanding switching applications. It offers a 1200V collector-emitter voltage and 30A current handling capability.
Total Stock: 1,350 pcs
$ Price Range: $0.99

NGTG15N120FL2WG Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,350 pcs
1350 pcs On Request 1 On Request On Request On Request On Request On Request

NGTG15N120FL2WG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector Emitter Cutoff Current (Maximum @ VGE = 0 V, VCE = 1200 V)
Collector Emitter Cutoff Current (Maximum @ VGE = 0 V, VCE = 1200 V, TJ = 175 °C)
Collector-Emitter Breakdown Voltage
Current
Gate Charge
Gate Charge (Typical @ VCE = 600 V, IC = 15 A, VGE = 15 V)
Gate Leakage Current
Gate to emitter charge
Gate-Emitter Threshold Voltage
Gate-Emitter Voltage
IGBT Type
Industrial Grade
Input Capacitance
Input Type
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Output Capacitance
Power
Power Dissipation (Maximum @ TC=100 °C)
Power Dissipation (Maximum @ TC=25 °C)
Pulsed Collector Current
Reverse Transfer Capacitance
Saturation Voltage (Maximum @ VGE = 15 V, IC = 15 A)
Saturation Voltage (Maximum @ Vge = 15 V, Ic = 15 A, Tj = 175 °C)
Short Circuit Withstand Time
Storage Temperature Range
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Vce(on) (Max) @ Vge, Ic
Voltage
current (Maximum @ TC = 100 °C)

NGTG15N120FL2WG Description

Short technical summary and product information.

The NGTG15N120FL2WG from On Semiconductor is an Insulated Gate Bipolar Transistor (IGBT) featuring a Trench Field Stop II construction. This design provides superior performance in switching applications, offering both low on-state voltage and minimal switching loss.

 

Key electrical specifications include a collector-emitter voltage of 1200V and a continuous collector current of 30A at 25°C (15A at 100°C). The device is optimized for high-speed switching and has a short circuit capability of 10 µs. It operates within a junction temperature range of -55°C to 175°C.

 

This IGBT is housed in a TO-247-3 package and is suitable for through-hole mounting. Typical applications include solar inverters, uninterruptible power supplies (UPS), and welding equipment. The device is Pb-Free.

 

With its robust construction and efficient performance characteristics, the NGTG15N120FL2WG is well-suited for power electronics designs requiring reliable high-voltage switching.

NGTG15N120FL2WG Quick Information

Product Type: IGBT Transistor
Canonical Name: NGTG15N120FL2WG IGBT - Field Stop II
Subcategory: Field Stop II

NGTG15N120FL2WG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NGTG15N120FL2WG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NGTG15N120FL2WG Features

  • Trench Field Stop II IGBT technology.
  • 1200V collector-emitter voltage rating.
  • 30A continuous collector current.
  • Optimized for high-speed switching.
  • TO-247-3 package for through-hole mounting.

NGTG15N120FL2WG Applications

  • Suitable for high-voltage switching applications.
  • Ideal for UPS and solar inverter systems.
  • Used in demanding power switching environments.
  • Applicable in welding power supplies.
  • Suitable for high-speed switching circuits.

NGTG15N120FL2WG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the NGTG15N120FL2WG?

The collector-emitter voltage is 1200 V.

What is the maximum continuous collector current for the NGTG15N120FL2WG?

The maximum continuous collector current is 30 A at 25°C and 15 A at 100°C.

What is the operating temperature range for this IGBT?

The operating junction temperature range is -55°C to 175°C.

What package type is the NGTG15N120FL2WG supplied in?

It is supplied in a TO-247-3 package.

Is the NGTG15N120FL2WG RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

Home
Account

Categories