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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,350 pcs
|
1350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Collector Emitter Cutoff Current (Maximum @ VGE = 0 V, VCE = 1200 V) | |
| Collector Emitter Cutoff Current (Maximum @ VGE = 0 V, VCE = 1200 V, TJ = 175 °C) | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Gate Charge | |
| Gate Charge (Typical @ VCE = 600 V, IC = 15 A, VGE = 15 V) | |
| Gate Leakage Current | |
| Gate to emitter charge | |
| Gate-Emitter Threshold Voltage | |
| Gate-Emitter Voltage | |
| IGBT Type | |
| Industrial Grade | |
| Input Capacitance | |
| Input Type | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Maximum @ TC=100 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Pulsed Collector Current | |
| Reverse Transfer Capacitance | |
| Saturation Voltage (Maximum @ VGE = 15 V, IC = 15 A) | |
| Saturation Voltage (Maximum @ Vge = 15 V, Ic = 15 A, Tj = 175 °C) | |
| Short Circuit Withstand Time | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| current (Maximum @ TC = 100 °C) |
The NGTG15N120FL2WG from On Semiconductor is an Insulated Gate Bipolar Transistor (IGBT) featuring a Trench Field Stop II construction. This design provides superior performance in switching applications, offering both low on-state voltage and minimal switching loss.
Key electrical specifications include a collector-emitter voltage of 1200V and a continuous collector current of 30A at 25°C (15A at 100°C). The device is optimized for high-speed switching and has a short circuit capability of 10 µs. It operates within a junction temperature range of -55°C to 175°C.
This IGBT is housed in a TO-247-3 package and is suitable for through-hole mounting. Typical applications include solar inverters, uninterruptible power supplies (UPS), and welding equipment. The device is Pb-Free.
With its robust construction and efficient performance characteristics, the NGTG15N120FL2WG is well-suited for power electronics designs requiring reliable high-voltage switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 1200 V.
The maximum continuous collector current is 30 A at 25°C and 15 A at 100°C.
The operating junction temperature range is -55°C to 175°C.
It is supplied in a TO-247-3 package.
Yes, the RoHS status is RoHS3 Compliant.