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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,557 pcs
|
17557 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Back Metal (Cathode) | |
| Current | |
| Die Size | |
| Die Thickness | |
| Inking | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Passivation | |
| Reverse Voltage (Maximum @ TJ=25 °C) | |
| Reverse Voltage (Minimum @ IR=320 µA, TJ=25 °C) | |
| Shipping Method | |
| Storage Environment | |
| Storage Time (Die on Tape) | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Top Metal (Anode) | |
| Voltage | |
| Wafer Size |
The NGTD8R65F2SWK is a fast switching rectifier die from onsemi, featuring a peak reverse voltage rating of 650V. It offers a typical forward voltage of 2.1V and a maximum of 2.8V at 30A, making it suitable for efficient power conversion.
This bare die is designed for surface mount assembly using die attach methods. It has a die size of 2.817 x 2.817 mm and a thickness of 0.254 mm, with top metal of 4 µm AlSi and back metal of 2 µm TiNiAg. The passivation is oxide-nitride.
Typical applications include industrial motor control and solar PV inverters, where fast switching and low forward voltage are critical for performance. The maximum junction temperature is 175°C.
| Qty | Low | High |
|---|---|---|
| 17,557+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak reverse voltage (VRRM) is 650V.
The typical forward voltage is 2.1V, with a maximum of 2.8V at 30A and 25°C.
The maximum junction temperature is 175°C.
The die size is 2.817 x 2.817 mm.
The maximum reverse current is 1 µA at 650V and 25°C.