| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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841 pcs
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841 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NGTD28T65F2SWK from ON Semiconductor is a Trench Field Stop II IGBT die designed for demanding motor drive and inverter applications. It boasts an extremely efficient trench structure with field stop technology, contributing to low VCE(sat) losses and reduced system power dissipation.
Key electrical specifications include a collector-emitter voltage of 650V and a pulsed collector current of 200A. The die operates within a junction temperature range of -55°C to +175°C. Mechanical data indicates a die size of 6000 x 4500 µm² and a thickness of 3 mils.
Typical applications for this IGBT die include industrial motor drives, solar inverters, UPS systems, and welding equipment. Its die form factor requires specialized mounting and assembly processes.
This component is supplied as a bare wafer on tape, suitable for integration into custom power modules.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 650V.
The pulsed collector current is 200A.
The operating temperature range is -55°C to +175°C (TJ).
It uses Trench Field Stop technology.
The VCE(sat) is 2V at 15V Vge and 75A Ic.
Typical applications include industrial motor drives, solar inverters, UPS systems, and welding.