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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,469 pcs
|
6469 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Cutoff Current | |
| Current | |
| Current (Maximum) | |
| Die Size | |
| Die Thickness | |
| Gate Leakage Current | |
| Gate-Emitter Threshold Voltage | |
| IGBT Type | |
| Input Capacitance | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature - Maximum | |
| Output Capacitance | |
| Reverse Transfer Capacitance | |
| Short Circuit Withstand Time | |
| Supplier Device Package | |
| Vce Sat (Maximum @ VGE = 15 V, IC = 30 A) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| Voltage - Maximum | |
| Wafer Size | |
| current (Maximum @ Note 2) |
The NGTD13T65F2WP is a Trench Field Stop II IGBT Die from ON Semiconductor, suitable for motor drive and inverter applications. It features an extremely efficient Trench with Field Stop Technology and low VCE(sat) loss, reducing system power dissipation.
Key electrical specifications include a collector-emitter voltage of 650V and a pulsed collector current of 120A. The device operates over a wide temperature range of -55°C to 175°C. It is supplied as a bare die, intended for surface mounting.
Typical applications for this IGBT die include industrial motor drives, solar inverters, UPS systems, and welding equipment. The die size is 3550 x 3550 µm², with a die thickness of 3 mils. It is packaged as a die on tape in a ring-pack, with a storage time of less than 3 months recommended.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 650V.
The maximum pulsed collector current is 120A.
The operating temperature range is -55°C to 175°C.
It uses Trench Field Stop II IGBT technology.
The collector-emitter saturation voltage is 2.2V at 15V gate-emitter voltage and 30A collector current.
The gate-emitter threshold voltage is typically 5.5V, with a range of 4.5V to 6.5V.
The package type is Die, supplied as a bare wafer on tape.