NGTB75N65FL2WAG The On Semiconductor NGTB75N65FL2WAG is a Field Stop II IGBT transistor with a 650V rating and 200A current capability. It is packaged in a TO-247-4L.
Mfr Part #:

NGTB75N65FL2WAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NGTB75N65FL2WAG is a Field Stop II IGBT transistor with a 650V rating and 200A current capability. It is packaged in a TO-247-4L.
✓ Total Stock: 30 pcs
$ Price Range: $0.99

NGTB75N65FL2WAG Available from 1 distributor

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NGTB75N65FL2WAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Gate Charge
IGBT Type
Industrial Grade
Input Type
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

NGTB75N65FL2WAG Description

Short technical summary and product information.

The NGTB75N65FL2WAG is an Insulated Gate Bipolar Transistor (IGBT) from On Semiconductor, featuring a Field Stop II Trench construction for superior performance in demanding switching applications. This device offers a low on-state voltage and minimal switching loss, making it suitable for applications like UPS and solar inverters.

 

Key electrical specifications include a collector-emitter voltage of 650V and a maximum collector current of 200A at 25°C, derating to 75A at 100°C. The power dissipation is rated at 536W at 25°C. The operating junction temperature range is from -55°C to 175°C.

 

This IGBT is housed in a TO-247-4L package, which provides a significant reduction in Eon losses compared to standard TO-247-3L packages. It also incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage. The device is optimized for high-speed switching and features a separate emitter drive pin.

 

Typical applications include solar inverters, uninterruptible power inverter supplies (UPS), and neutral point clamp topologies. The NGTB75N65FL2WAG is a Pb-Free device.

NGTB75N65FL2WAG Quick Information

Product Type: IGBT Transistor
Canonical Name: NGTB75N65FL2WAG IGBT
Subcategory: Single

NGTB75N65FL2WAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NGTB75N65FL2WAG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NGTB75N65FL2WAG Features

  • Extremely efficient Field Stop II Trench technology.
  • Maximum junction temperature of 175°C.
  • Separate emitter drive pin included.
  • TO-247-4L package for reduced Eon losses.
  • Optimized for high-speed switching applications.

NGTB75N65FL2WAG Applications

  • Suitable for solar inverter applications.
  • Used in uninterruptible power supplies (UPS).
  • Ideal for high-speed switching in industrial drives.
  • Applicable in neutral point clamp topologies.
  • Suitable for demanding switching applications with low losses.

NGTB75N65FL2WAG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NGTB75N65FL2WAG?

The maximum collector-emitter voltage is 650 V.

What is the continuous collector current at 100°C?

The continuous collector current at 100°C is 75 A.

What is the operating temperature range for this IGBT?

The operating junction temperature range is -55°C to 175°C.

What package type is the NGTB75N65FL2WAG supplied in?

The device is supplied in a TO-247-4L package.

Is the NGTB75N65FL2WAG RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

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