NGTB60N65FL2WG The NGTB60N65FL2WG is an IGBT transistor from On Semiconductor featuring Field Stop II technology. It offers a 650V collector-emitter voltage and 100A collector current, suitable for demanding switching applications.
Mfr Part #:

NGTB60N65FL2WG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NGTB60N65FL2WG is an IGBT transistor from On Semiconductor featuring Field Stop II technology. It offers a 650V collector-emitter voltage and 100A collector current, suitable for demanding switching applications.
✓ Total Stock: 1,200 pcs
$ Price Range: $0.99

NGTB60N65FL2WG Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,080 pcs
1080 pcs On Request 1 On Request On Request 1614+ On Request On Request
Non-Authorised Inventory information
120 pcs
120 pcs On Request 1 On Request On Request On Request On Request On Request

NGTB60N65FL2WG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

NGTB60N65FL2WG Description

Short technical summary and product information.

The NGTB60N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) from ON Semiconductor, utilizing an efficient Trench with Field Stop construction. This device is designed for demanding switching applications, offering a balance of low on-state voltage and minimal switching loss.

 

Key electrical specifications include a collector-emitter voltage of 650V and a maximum collector current of 100A at 25°C (60A at 100°C). It features a high power dissipation capability of 595W at 25°C and a maximum operating junction temperature of 175°C. The IGBT type is Field Stop, with a standard input type and a gate charge of 318 nC.

 

This component is housed in a TO-247-3 package and is designed for through-hole mounting. It is suitable for applications such as solar inverters, uninterruptible power supplies (UPS), and welding equipment. The device also offers a short-circuit withstand time of 5 µs.

 

The NGTB60N65FL2WG is Pb-Free and RoHS3 Compliant, with a Moisture Sensitivity Level of 1. It operates within a wide temperature range from -55°C to 175°C.

NGTB60N65FL2WG Quick Information

Product Type: IGBT Transistor
Canonical Name: NGTB60N65FL2WG IGBT - Field Stop II
Subcategory: Field Stop

NGTB60N65FL2WG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NGTB60N65FL2WG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NGTB60N65FL2WG Features

  • Extremely efficient trench with field stop technology.
  • 650V collector-emitter voltage rating.
  • 100A maximum collector current.
  • 595W maximum power dissipation.
  • TO-247-3 package for through-hole mounting.

NGTB60N65FL2WG Applications

  • Suitable for solar inverters.
  • Used in uninterruptible power supplies.
  • Applicable for welding equipment.
  • Optimized for high-speed switching.

NGTB60N65FL2WG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the NGTB60N65FL2WG?

The collector-emitter voltage is 650 V.

What is the maximum collector current for the NGTB60N65FL2WG?

The maximum collector current is 100 A at 25°C and 60 A at 100°C.

What is the operating temperature range for this IGBT?

The operating junction temperature range is -55°C to 175°C.

What package type is the NGTB60N65FL2WG supplied in?

It is supplied in a TO-247-3 package.

Is the NGTB60N65FL2WG RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

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