| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NGTB50N60S1WG is an Insulated Gate Bipolar Transistor (IGBT) featuring a robust Trench construction for superior performance in demanding switching applications. It offers a low on-state voltage and minimal switching loss, making it well-suited for welding applications.
This IGBT has a maximum collector-emitter voltage of 600V and can handle a continuous collector current of 100A at 25°C, derating to 50A at 100°C. It boasts a high power dissipation of 417W at 25°C. The device operates within a junction temperature range of -55°C to +175°C.
The NGTB50N60S1WG is packaged in a TO-247-3 through-hole configuration. It includes a co-packaged soft and fast reverse recovery diode with a low forward voltage. The IGBT is optimized for high-speed switching and features a short-circuit capability of 5 µs.
Typical applications include welding. The device is Pb-Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600 V.
The continuous collector current at 25°C is 100 A.
The power dissipation at 25°C is 417 W.
The operating junction temperature range is -55°C to +175°C.
The NGTB50N60S1WG is available in a TO-247-3 package.