NGTB50N60FWG The ON Semiconductor NGTB50N60FWG is a 600V, 100A IGBT Transistor designed for demanding switching applications. It features a TO-247 package and optimized low VCEsat performance.
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NGTB50N60FWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NGTB50N60FWG is a 600V, 100A IGBT Transistor designed for demanding switching applications. It features a TO-247 package and optimized low VCEsat performance.
✓ Total Stock: 60 pcs
$ Price Range: $0.99

NGTB50N60FWG Available from 1 distributor

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NGTB50N60FWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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NGTB50N60FWG Description

Short technical summary and product information.

The ON Semiconductor NGTB50N60FWG is an Insulated Gate Bipolar Transistor (IGBT) utilizing a Trench construction for cost-effective and superior performance in switching applications. It offers a low on-state voltage and minimal switching loss.

 

Key electrical specifications include a Collector-Emitter Voltage of 600V and a Continuous Collector Current of 100A at 25°C, with a Pulsed Collector Current up to 200A. The device exhibits a typical Collector-Emitter Saturation Voltage of 1.45V at 50A and 15V Gate-Emitter Voltage. Power dissipation is rated at 223W at 25°C.

 

This IGBT is suitable for applications such as solar inverters, uninterruptible power supplies (UPS), and motor drives. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-247 package.

 

The NGTB50N60FWG features a short-circuit withstand time of 5µs and a soft fast reverse recovery diode. It is designed for through-hole mounting.

NGTB50N60FWG Quick Information

Product Type: IGBT Transistor
Canonical Name: NGTB50N60FWG IGBT
Subcategory: IGBTs

NGTB50N60FWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NGTB50N60FWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NGTB50N60FWG Features

  • Optimized for very low VCEsat.
  • Low switching loss reduces power dissipation.
  • Features a soft fast reverse recovery diode.
  • 5 µs short-circuit withstand capability.
  • Pb-Free device.

NGTB50N60FWG Applications

  • Used in high-voltage power switching circuits
  • Suitable for industrial power converters
  • Applied in automotive motor control systems
  • Ideal for high-current switching applications

NGTB50N60FWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NGTB50N60FWG?

The maximum collector-emitter voltage is 600 V.

What is the continuous collector current at 25°C?

The continuous collector current at 25°C is 100 A.

What is the power dissipation at 25°C?

The power dissipation at 25°C is 223 W.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What package type is the NGTB50N60FWG available in?

The NGTB50N60FWG is available in a TO-247 package.

Is the NGTB50N60FWG RoHS compliant?

The RoHS status is RoHS3 Compliant.

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