| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NGTB50N60FWG is an Insulated Gate Bipolar Transistor (IGBT) utilizing a Trench construction for cost-effective and superior performance in switching applications. It offers a low on-state voltage and minimal switching loss.
Key electrical specifications include a Collector-Emitter Voltage of 600V and a Continuous Collector Current of 100A at 25°C, with a Pulsed Collector Current up to 200A. The device exhibits a typical Collector-Emitter Saturation Voltage of 1.45V at 50A and 15V Gate-Emitter Voltage. Power dissipation is rated at 223W at 25°C.
This IGBT is suitable for applications such as solar inverters, uninterruptible power supplies (UPS), and motor drives. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-247 package.
The NGTB50N60FWG features a short-circuit withstand time of 5µs and a soft fast reverse recovery diode. It is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600 V.
The continuous collector current at 25°C is 100 A.
The power dissipation at 25°C is 223 W.
The operating junction temperature range is -55°C to +150°C.
The NGTB50N60FWG is available in a TO-247 package.
The RoHS status is RoHS3 Compliant.