NGTB50N120FL2WG The ON Semiconductor NGTB50N120FL2WG is a Field Stop II Trench IGBT transistor designed for demanding switching applications. It offers a 1200V collector-emitter voltage and 100A current rating.
Mfr Part #:

NGTB50N120FL2WG

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NGTB50N120FL2WG is a Field Stop II Trench IGBT transistor designed for demanding switching applications. It offers a 1200V collector-emitter voltage and 100A current rating.
✓ Total Stock: 9,667 pcs
$ Price Range: $0.99

NGTB50N120FL2WG Available from 3 distributors

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NGTB50N120FL2WG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

NGTB50N120FL2WG Description

Short technical summary and product information.

The NGTB50N120FL2WG from ON Semiconductor is an Insulated Gate Bipolar Transistor (IGBT) featuring a robust Field Stop II Trench construction. This design provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss.

 

Key electrical specifications include a 1200V collector-emitter voltage and a 100A continuous collector current at 25°C. The device boasts a high power dissipation of 535W at 25°C and is optimized for high-speed switching with a switching energy of 4.4mJ (on) and 1.4mJ (off). It also features a soft, fast co-packaged free-wheeling diode with a low forward voltage.

 

This IGBT is well-suited for applications such as solar inverters and Uninterruptible Power Supplies (UPS). It is housed in a TO-247 package with through-hole mounting.

 

The operating junction temperature range is -55°C to 175°C, and it has a short circuit capability of 10µs. The device is Pb-Free.

NGTB50N120FL2WG Quick Information

Product Type: IGBT Transistor
Canonical Name: NGTB50N120FL2WG IGBT - Field Stop II
Subcategory: Single

NGTB50N120FL2WG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NGTB50N120FL2WG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NGTB50N120FL2WG Features

  • Extremely efficient Trench Field Stop technology.
  • 1200V collector-emitter voltage rating.
  • 100A continuous collector current.
  • 535W maximum power dissipation.
  • TO-247 package for through-hole mounting.

NGTB50N120FL2WG Applications

  • Ideal for solar inverter applications.
  • Suitable for Uninterruptible Power Supplies (UPS).
  • Used in demanding switching applications.
  • Designed for high-speed switching.

NGTB50N120FL2WG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NGTB50N120FL2WG?

The maximum collector-emitter voltage is 1200 V.

What is the continuous collector current rating at 25°C?

The continuous collector current rating at 25°C is 100 A.

What is the maximum power dissipation at 25°C?

The maximum power dissipation at 25°C is 535 W.

What is the operating temperature range for this IGBT?

The operating junction temperature range is -55°C to 175°C.

What type of package is the NGTB50N120FL2WG in?

The device is supplied in a TO-247-3 package.

How is the NGTB50N120FL2WG mounted?

It is a through-hole mounting type.

Is the NGTB50N120FL2WG RoHS compliant?

The device is RoHS3 Compliant.

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