| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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240 pcs
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240 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NGTB40N65IHRTG from On Semiconductor is an Insulated Gate Bipolar Transistor (IGBT) featuring a robust and cost-effective Field Stop (FS2) trench construction with an integrated monolithic Reverse Conducting Diode. This device is optimized for low conduction losses, making it suitable for resonant or soft switching applications.
Key electrical specifications include a collector-emitter voltage of 650V and a continuous collector current of 40A at 100°C (80A at 25°C). The IGBT also features a diode forward current rating of 40A at 100°C. Its low VCEsat and efficient trench with Fieldstop technology contribute to reduced power dissipation, particularly in inductive heating applications.
The NGTB40N65IHRTG is housed in a TO-3P package. Typical applications include inductive heating, air conditioning PFC, and welding. The device is Pb-Free and designed for reliable performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 650 V.
The continuous collector current at 100°C is 40 A.
The typical collector-emitter saturation voltage is 1.55 V.
The operating junction temperature range is -40°C to +175°C.
The NGTB40N65IHRTG is available in a TO-3P package.