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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,547 pcs
|
2547 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Emitter Cutoff Current (Maximum @ VGE = 0 V, VCE = 600 V) | |
| Collector Emitter Cutoff Current (Maximum @ VGE = 0 V, VCE = 600 V, TJ = 175 °C) | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Gate Charge | |
| Gate Emitter Voltage (@ TPULSE = 5 µs, D < 0.10) | |
| Gate Emitter Voltage (Unspecified condition) | |
| Gate Leakage Current | |
| Gate-Emitter Threshold Voltage | |
| IGBT Type | |
| Input Capacitance | |
| Input Type | |
| Lead Temperature for Soldering | |
| Mounting Type | |
| Operating Junction Temperature Range | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Maximum @ TC=100 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Unspecified condition) | |
| Reverse Recovery Time (trr) | |
| Saturation Voltage (Maximum @ 15 V, 40 A) | |
| Saturation Voltage (Maximum @ VGE = 15 V, IC = 40 A, TJ = 175 °C) | |
| Saturation Voltage (Typical @ VGE = 15 V, IC = 40 A) | |
| Short Circuit Withstand Time | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| current (Maximum @ TC = 100 °C) | |
| current (Maximum @ TPULSE Limited by TJ Max) |
The ON Semiconductor NGTB40N60L2WG is an Insulated Gate Bipolar Transistor (IGBT) featuring a robust Trench Field Stop construction. This design offers superior performance in demanding switching applications, providing both low on-state voltage and minimal switching loss.
Key electrical specifications include a collector-emitter voltage of 600V and a maximum collector current of 80A at 25°C (40A at 100°C). The device offers a high power dissipation of 417W at 25°C and operates within a junction temperature range of -55°C to +175°C. It also features a short-circuit withstand time of 5µs.
The NGTB40N60L2WG is packaged in a TO-247-3 case and utilizes a through-hole mounting type. Its typical applications include motor drive inverters, industrial switching, and welding.
This IGBT is designed for efficiency with optimized low VCEsat and a soft fast reverse recovery diode. It is a Pb-Free device, indicating compliance with environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 600 V.
The maximum continuous collector current at 25°C is 80 A.
The operating junction temperature range is -55°C to +175°C.
It is supplied in a TO-247-3 package.
The RoHS status is RoHS3 Compliant.