| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,096 pcs
|
2096 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The NGTB40N120L3WG from On Semiconductor is an Insulated Gate Bipolar Transistor (IGBT) utilizing an Ultra Field Stop Trench construction. This design provides superior performance in switching applications, characterized by low on-state voltage and minimal switching loss.
Key electrical specifications include a collector-emitter voltage of 1200V and a continuous collector current of 160A at 25°C, derating to 40A at 100°C. The device features a maximum operating junction temperature of 175°C and a power dissipation of 454W at 25°C.
This IGBT is well-suited for motor driver applications, solar inverters, and UPS systems. It is packaged in a TO-247-3 through-hole configuration, facilitating easy integration into circuit designs.
The device incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage, enhancing its overall performance and reliability in high-power switching scenarios.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200 V.
The continuous collector current at 25°C is 160 A.
The operating junction temperature range is -55°C to 175°C.
It is supplied in a TO-247-3 package.
Yes, it is RoHS3 Compliant.