NGTB40N120FL3WG The NGTB40N120FL3WG is an Ultra Field Stop Trench IGBT from ON Semiconductor. It offers a 1200V collector-emitter voltage and a 160A pulsed collector current.
Mfr Part #:

NGTB40N120FL3WG

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NGTB40N120FL3WG is an Ultra Field Stop Trench IGBT from ON Semiconductor. It offers a 1200V collector-emitter voltage and a 160A pulsed collector current.
✓ Total Stock: 5,023 pcs
$ Price Range: $0.99

NGTB40N120FL3WG Available from 4 distributors

✓ Authorised
✓ Non-Authorised

NGTB40N120FL3WG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Lead Spacing
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

NGTB40N120FL3WG Description

Short technical summary and product information.

This ON Semiconductor NGTB40N120FL3WG is an Insulated Gate Bipolar Transistor (IGBT) utilizing an Ultra Field Stop Trench construction. It is designed for demanding switching applications, providing low on-state voltage and minimal switching loss.

 

The device features a maximum collector-emitter voltage of 1200V and can handle a pulsed collector current of up to 160A. It offers a maximum power dissipation of 454W at 25°C case temperature. The operating junction temperature range is from -55°C to 175°C.

 

Key electrical characteristics include a typical collector-emitter saturation voltage of 1.7V at 15V gate-emitter voltage and 40A collector current. The typical gate-emitter threshold voltage is 5.5V. Switching performance is supported by a typical switching energy of 1.6mJ (on) and 1.1mJ (off).

 

The NGTB40N120FL3WG is supplied in a TO-247-3 package and is designed for through-hole mounting. It is well-suited for applications such as solar inverters and uninterruptible power supplies (UPS).

NGTB40N120FL3WG Quick Information

Product Type: IGBT Transistor
Canonical Name: NGTB40N120FL3WG Ultra Field Stop Trench IGBT
Subcategory: Single

NGTB40N120FL3WG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NGTB40N120FL3WG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NGTB40N120FL3WG Features

  • Extremely efficient trench field stop technology.
  • Maximum junction temperature of 175°C.
  • Soft, fast reverse recovery diode.
  • Optimized for high-speed switching.
  • Pb-Free device.

NGTB40N120FL3WG Applications

  • Used in high-voltage power switching circuits
  • Suitable for motor control applications
  • Ideal for power supply inverters
  • Applied in industrial motor drives

NGTB40N120FL3WG FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NGTB40N120FL3WG?

The maximum collector-emitter voltage is 1200 V.

What is the operating temperature range for this IGBT?

The operating junction temperature range is -55°C to 175°C.

What package type is the NGTB40N120FL3WG supplied in?

It is supplied in a TO-247-3 package.

Is the NGTB40N120FL3WG RoHS compliant?

Yes, it is RoHS3 Compliant.

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