NGTB40N120FL2WG The ON Semiconductor NGTB40N120FL2WG is a Trench Field Stop IGBT Transistor with a 1200V collector-emitter voltage and 80A continuous collector current. It is supplied in a TO-247 package.
Mfr Part #:

NGTB40N120FL2WG

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NGTB40N120FL2WG is a Trench Field Stop IGBT Transistor with a 1200V collector-emitter voltage and 80A continuous collector current. It is supplied in a TO-247 package.
✓ Total Stock: 2,401 pcs
$ Price Range: $0.99

NGTB40N120FL2WG Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,124 pcs
1124 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,110 pcs
1110 pcs On Request 1 On Request On Request On Request On Request On Request
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167 pcs
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NGTB40N120FL2WG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Gate Charge
IGBT Type
Industrial Grade
Input Type
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

NGTB40N120FL2WG Description

Short technical summary and product information.

The ON Semiconductor NGTB40N120FL2WG is an IGBT Transistor featuring a Trench Field Stop construction for superior performance in demanding switching applications. It offers a low on-state voltage and minimal switching loss.

 

Key electrical specifications include a collector-emitter voltage of 1200V and a continuous collector current of 80A at 25°C, derating to 40A at 100°C. The device can handle a pulsed collector current of up to 200A. Power dissipation is rated at 535W at 25°C.

 

This IGBT is optimized for high-speed switching and includes a soft, fast co-packaged free-wheeling diode with a low forward voltage. It has a short circuit withstand time of 10 µs.

 

The NGTB40N120FL2WG operates within a junction temperature range of -55°C to 175°C and is housed in a TO-247 package, suitable for through-hole mounting.

NGTB40N120FL2WG Quick Information

Product Type: IGBT Transistor
Series: Ngtb40n120fl2
Canonical Name: NGTB40N120FL2WG IGBT Transistor
Subcategory: IGBTs

NGTB40N120FL2WG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NGTB40N120FL2WG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NGTB40N120FL2WG Features

  • 1200V collector-emitter voltage rating.
  • 80A continuous collector current.
  • 535W maximum power dissipation.
  • Trench Field Stop technology.
  • TO-247 package for through-hole mounting.

NGTB40N120FL2WG Applications

  • Used in high-voltage power switching circuits
  • Suitable for motor drive inverters
  • Ideal for industrial power control
  • Applied in renewable energy systems

NGTB40N120FL2WG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the NGTB40N120FL2WG?

The collector-emitter voltage is 1200 V.

What is the continuous collector current at 25°C?

The continuous collector current at 25°C is 80 A.

What is the power dissipation of the NGTB40N120FL2WG?

The power dissipation is 535 W at 25°C.

What is the operating temperature range for this IGBT?

The operating junction temperature range is -55°C to 175°C.

What package type is the NGTB40N120FL2WG supplied in?

It is supplied in a TO-247 package.

Is the NGTB40N120FL2WG RoHS compliant?

The device is RoHS3 Compliant.

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