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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Gate Charge | |
| Gate-Emitter Leakage Current | |
| Gate-Emitter Threshold Voltage | |
| IGBT Type | |
| Input Type | |
| Lead Temperature for Soldering | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature (Minimum/Maximum) | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ TC=100 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) | |
| Reverse Recovery Time (trr) | |
| Saturation Voltage (Maximum @ VGE = 15 V, IC = 35 A) | |
| Saturation Voltage (Maximum @ VGE = 15 V, IC = 35 A, TJ = 175 °C) | |
| Saturation Voltage (Maximum) | |
| Short Circuit Withstand Time | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| current (Maximum @ 25 °C) | |
| current (Maximum @ TC = 100 °C) | |
| current (Maximum @ TPULSE Limited by TJ Max) |
The ON Semiconductor NGTB35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for demanding switching applications. It utilizes an efficient Trench Field Stop II construction, providing superior performance with low on-state voltage and minimal switching loss.
Key electrical specifications include a collector-emitter voltage of 650V and a continuous collector current of 70A at 25°C, derating to 35A at 100°C. The device features a maximum power dissipation of 300W at 25°C. It operates within a junction temperature range of -55°C to +175°C.
This IGBT is optimized for high-speed switching and includes a soft, fast reverse recovery diode. Typical applications include solar inverters, uninterruptible power supplies (UPS), and welding equipment. The device is supplied in a TO-247-3 package suitable for through-hole mounting.
The NGTB35N65FL2WG is Pb-Free and designed for robust performance in power electronics systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 650V.
The continuous collector current rating at 25°C is 70A.
The power dissipation is 300W at 25°C.
The operating junction temperature range is -55°C to 175°C.
It is supplied in a TO-247-3 package.
Yes, it is RoHS3 Compliant.