| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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90 pcs
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90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
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| Vce(on) (Max) @ Vge, Ic | |
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The NGTB35N60FL2WG is an Insulated Gate Bipolar Transistor (IGBT) from On Semiconductor, utilizing a robust and cost-effective Field Stop II Trench construction. This design provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss.
Key electrical specifications include a collector-emitter voltage of 600V and a maximum continuous collector current of 70A at 25°C (35A at 100°C). The device supports a power dissipation of 300W at 25°C and operates within a junction temperature range of -55°C to 175°C. It features a typical saturation voltage of 1.70V at 35A and a gate-emitter threshold voltage of 5.5V.
This IGBT is optimized for high-speed switching applications and includes a soft, fast co-packaged free-wheeling diode with a low forward voltage. Its short-circuit withstand time is rated at 5µs. The device is housed in a TO-247 package, suitable for through-hole mounting.
Typical applications for the NGTB35N60FL2WG include solar inverters, uninterruptible power supplies (UPS), and welding equipment. The device is Pb-Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600 V.
The continuous collector current is 70 A at 25°C and 35 A at 100°C.
The power dissipation is 300 W at 25°C and 150 W at 100°C.
The operating junction temperature range is -55°C to 175°C.
The NGTB35N60FL2WG is supplied in a TO-247-3 package.
The RoHS status is RoHS3 Compliant.
The typical saturation voltage is 1.70 V at 15V, 35A.