| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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90 pcs
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90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Gate Charge | |
| IGBT Type | |
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| Input Type | |
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| Operating Temperature | |
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| Switching Energy | |
| Tape & Reel | |
| Td (on | |
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| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The NGTB30N65IHL2WG is an Insulated Gate Bipolar Transistor (IGBT) from On Semiconductor, utilizing an efficient Trench Field Stop construction. This device is designed for demanding switching applications, offering a low on-state voltage and minimal switching loss. It is well-suited for half-bridge resonant applications and inductive heating.
Key electrical specifications include a collector-emitter voltage of 650V and a continuous collector current of 60A at 25°C (30A at 100°C). The IGBT features a maximum power dissipation of 300W at 25°C. It operates within a junction temperature range of -55°C to 175°C.
The device incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage. Electrical characteristics include a typical collector-emitter saturation voltage of 1.6V at 15V and 30A, and a gate-emitter threshold voltage of 5.5V. Input capacitance is typically 3200 pF.
Packaged in a TO-247-3 through-hole configuration, the NGTB30N65IHL2WG is designed for robust performance. It is optimized for low losses in applications like IH cookers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 650 V.
The continuous collector current is 60 A at 25°C and 30 A at 100°C.
The operating junction temperature range is -55°C to 175°C.
The device is supplied in a TO-247-3 package for through-hole mounting.
The collector-emitter saturation voltage is typically 1.6 V at 15V and 30A, and a maximum of 2.2 V at 175°C.
The gate-emitter threshold voltage is typically 5.5 V.