NGTB25N120LWG The On Semiconductor NGTB25N120LWG is a Trench Field Stop IGBT designed for demanding switching applications. It offers a 1200V collector-emitter voltage and a 50A continuous collector current.
Mfr Part #:

NGTB25N120LWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NGTB25N120LWG is a Trench Field Stop IGBT designed for demanding switching applications. It offers a 1200V collector-emitter voltage and a 50A continuous collector current.
✓ Total Stock: 5,000 pcs
$ Price Range: $0.99

NGTB25N120LWG Available from 1 distributor

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✓ Non-Authorised
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5000 pcs On Request 1 On Request On Request On Request On Request On Request

NGTB25N120LWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

NGTB25N120LWG Description

Short technical summary and product information.

The NGTB25N120LWG from On Semiconductor is an Insulated Gate Bipolar Transistor (IGBT) featuring a robust Trench Field Stop construction. This design provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss, making it well-suited for resonant or soft switching applications.

 

Key electrical specifications include a 1200V collector-emitter voltage and a continuous collector current of 50A at 25°C, derating to 25A at 100°C. The device can handle pulsed collector currents up to 200A. It features a low saturation voltage of 1.85V typical at 25A and 15V gate-emitter voltage, and a typical gate charge of 200 nC. The power dissipation is rated at 192W at 25°C.

 

This IGBT operates within a junction temperature range of -55°C to 150°C and is housed in a TO-247-3 package suitable for through-hole mounting. The device also includes a co-packaged free-wheeling diode with a low forward voltage.

 

Typical applications for the NGTB25N120LWG include inverter welding machines, microwave ovens, industrial switching, and motor control inverters.

NGTB25N120LWG Quick Information

Product Type: IGBT
Canonical Name: NGTB25N120LWG IGBT
Subcategory: Transistors - IGBTs - Single

NGTB25N120LWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NGTB25N120LWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NGTB25N120LWG Features

  • Trench Field Stop IGBT technology.
  • 1200V collector-emitter voltage rating.
  • 50A continuous collector current.
  • Low on-state voltage and switching loss.
  • TO-247-3 through-hole package.

NGTB25N120LWG Applications

  • Suitable for inverter welding machines.
  • Used in microwave oven applications.
  • Ideal for industrial switching.
  • Applicable for motor control inverters.

NGTB25N120LWG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NGTB25N120LWG?

The maximum collector-emitter voltage is 1200 V.

What is the continuous collector current rating?

The continuous collector current is 50 A at 25°C and 25 A at 100°C.

What is the typical collector-emitter saturation voltage?

The typical collector-emitter saturation voltage is 1.85 V at 15V gate-emitter voltage and 25A collector current.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package type is the NGTB25N120LWG supplied in?

The NGTB25N120LWG is supplied in a TO-247-3 package.

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