NGTB25N120FLWG The ON Semiconductor NGTB25N120FLWG is a 1200V, 25A single IGBT designed for demanding switching applications. It features a Trench Field Stop construction for superior performance.
Mfr Part #:

NGTB25N120FLWG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NGTB25N120FLWG is a 1200V, 25A single IGBT designed for demanding switching applications. It features a Trench Field Stop construction for superior performance.
✓ Total Stock: 9,694 pcs
$ Price Range: $0.99

NGTB25N120FLWG Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,678 pcs
7678 pcs On Request 1 On Request On Request 16+ On Request On Request
Non-Authorised Inventory information
2,016 pcs
2016 pcs On Request 1 On Request On Request 24+ On Request On Request

NGTB25N120FLWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Container Type
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

NGTB25N120FLWG Description

Short technical summary and product information.

The ON Semiconductor NGTB25N120FLWG is a high-performance Insulated Gate Bipolar Transistor (IGBT) featuring a robust Trench Field Stop construction. This device offers a low on-state voltage and minimal switching loss, making it well-suited for applications such as UPS and solar inverters.

 

Key electrical specifications include a collector-emitter voltage of 1200V and a continuous collector current of 50A at 25°C (25A at 100°C). It boasts a low saturation voltage (VCEsat) of 2.0V typical at 25A and a low gate charge of 220 nC. The IGBT also incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage.

 

Designed for demanding switching applications, the NGTB25N120FLWG operates across a wide temperature range from -55°C to +150°C. It is housed in a standard TO-247-3 package, suitable for through-hole mounting. The device offers a short circuit withstand time of 10 µs and a power dissipation of 192W at 25°C.

NGTB25N120FLWG Quick Information

Product Type: IGBT
Series: NGTB25
Canonical Name: NGTB25N120FLWG Single IGBT
Subcategory: Single IGBTs

NGTB25N120FLWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NGTB25N120FLWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NGTB25N120FLWG Features

  • 1200V collector-emitter voltage rating.
  • 50A continuous collector current.
  • Low saturation voltage and switching loss.
  • Trench Field Stop IGBT technology.
  • TO-247-3 package for through-hole mounting.

NGTB25N120FLWG Applications

  • Ideal for UPS inverter applications.
  • Suitable for solar inverter designs.
  • Used in demanding switching circuits.
  • High-performance power applications.

NGTB25N120FLWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NGTB25N120FLWG?

The maximum collector-emitter voltage is 1200 V.

What is the continuous collector current rating?

The continuous collector current is 50 A at 25°C and 25 A at 100°C.

What is the typical collector-emitter saturation voltage?

The typical collector-emitter saturation voltage is 2.0 V at 15V and 25A.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What package type is the NGTB25N120FLWG supplied in?

The NGTB25N120FLWG is supplied in a TO-247-3 package.

Does this IGBT have a co-packaged diode?

Yes, the NGTB25N120FLWG features a co-packaged free-wheeling diode.

Home
Account

Categories