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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
4,349 pcs
|
4349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Nominal @ TC = 100 °C) | |
| Collector Current (Nominal @ TC = 25 °C) | |
| Collector Current (Nominal) | |
| Collector Emitter Saturation Voltage (Maximum @ Vge = 15 V, IC = 25 A) | |
| Collector Emitter Saturation Voltage (Maximum @ Vge = 15 V, IC = 25 A, TJ = 175 °C) | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Diode Forward Current (Nominal @ TC = 100 °C) | |
| Diode Forward Current (Nominal @ TC = 25 °C) | |
| Diode Pulsed Current | |
| Gate Charge | |
| Gate-Emitter Threshold Voltage | |
| Gate-Emitter Voltage | |
| IGBT Type | |
| Input Type | |
| Lead Temperature for Soldering | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Nominal @ TC=25 °C) | |
| Power Dissipation (Nominal @ Tc=100 °C) | |
| Power Dissipation (Nominal) | |
| Pulsed Collector Current | |
| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
| Short Circuit Withstand Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Thermal Resistance Junction-to-Ambient | |
| Thermal Resistance Junction-to-Case (Diode) | |
| Thermal Resistance Junction-to-Case (IGBT) | |
| Transient Gate-Emitter Voltage | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The NGTB25N120FL2WG is an Insulated Gate Bipolar Transistor (IGBT) from ON Semiconductor, utilizing a Field Stop II Trench construction for superior performance in demanding switching applications. This device offers a low on-state voltage and minimal switching loss, making it well-suited for applications such as solar inverters and Uninterruptible Power Supplies (UPS).
Key electrical characteristics include a collector-emitter voltage of 1200V and a continuous collector current of 50A at 25°C. The operating junction temperature range is -55°C to 175°C, with a maximum power dissipation of 385W at 25°C. The device is packaged in a TO-247-3 through-hole package.
This IGBT incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage. It is optimized for high-speed switching and has a short circuit capability of 10µs. The device is also Pb-Free.
Typical applications include solar inverters, uninterruptible power inverters supplies (UPS), and welding equipment. The robust construction and efficient performance make it a reliable choice for power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 1200V.
The continuous collector current is 50A at 25°C.
The operating junction temperature range is -55°C to 175°C.
The NGTB25N120FL2WG is in a TO-247-3 package.
Yes, this device is RoHS3 Compliant.
The maximum power dissipation is 385W at 25°C.