| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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148 pcs
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148 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NGTB20N60L2TF1G is an insulated gate bipolar transistor (IGBT) manufactured by On Semiconductor. It is rated for 600 volts and 20 amperes, making it suitable for high-voltage switching applications. The device is packaged in a TO3PF package, which allows for through-hole mounting and efficient heat dissipation. Its electrical specifications include a gate charge of 84 nC, a collector-emitter saturation voltage of 1.65V at 15V, and an operating temperature of up to 175°C.
This IGBT is used in power electronics, motor drives, and inverter circuits where high voltage and current handling are required. The device's thermal and electrical characteristics enable reliable operation in demanding environments. The package type, TO3PF, is compatible with standard power module designs, facilitating integration into existing systems.
The device's construction and specifications support high-speed switching and efficient power management. It is designed for applications requiring robust high-voltage switching with controlled gate charge and low saturation voltage. The device's environmental compliance includes RoHS3, although verification is pending.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating voltage is 600V.
It uses a TO3PF package.
It operates up to 175°C.