NGTB20N120IHLWG The NGTB20N120IHLWG is a single IGBT from On Semiconductor with a 1200V collector-emitter voltage and 40A current rating. It features a TO-247-3 package.
Mfr Part #:

NGTB20N120IHLWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NGTB20N120IHLWG is a single IGBT from On Semiconductor with a 1200V collector-emitter voltage and 40A current rating. It features a TO-247-3 package.
Total Stock: 25 pcs
$ Price Range: $0.99

NGTB20N120IHLWG Available from 1 distributor

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NGTB20N120IHLWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
Gate Leakage Current
Gate-Emitter Threshold Voltage
Input Type
Lead Temperature for Soldering
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TC=100 °C)
Power Dissipation (Maximum @ TC=25 °C)
Pulsed Current (Maximum @ Tpulse limited by TJmax)
Storage Temperature
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Thermal Resistance Junction To Case (Typical @ for Diode)
Thermal Resistance Junction To Case (Typical @ for IGBT)
Thermal Resistance Junction-to-Ambient
Vce(on) (Max) @ Vge, Ic
Voltage
current (Maximum @ TC = 100 °C)
ices (Maximum @ VGE = 0 V, VCE = 1200 V)
ices (Maximum @ VGE = 0 V, VCE = 1200 V, TJ = 150 °C)
vcesat (Maximum @ VGE = 15 V, IC = 20 A, TJ = 150 °C)
vcesat (Typical @ VGE = 15 V, IC = 20 A)

NGTB20N120IHLWG Description

Short technical summary and product information.

The NGTB20N120IHLWG is an Insulated Gate Bipolar Transistor (IGBT) from On Semiconductor, designed for demanding switching applications. It utilizes a Field Stop (FS) Trench construction for superior performance, offering both low on-state voltage and minimal switching loss.

 

This IGBT has a collector-emitter voltage rating of 1200V and can handle up to 40A of collector current at 25°C. It features a low saturation voltage of 1.80V typical at 20A and a switching energy of 0.7 mJ (off).

 

The device is housed in a TO-247-3 package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to 150°C and has a power dissipation of 192W at 25°C.

 

Typical applications include inductive heating, consumer appliances, and soft switching circuits. The IGBT is also Pb-Free.

NGTB20N120IHLWG Quick Information

Product Type: IGBT
Canonical Name: NGTB20N120IHLWG Single IGBT
Subcategory: Single IGBTs

NGTB20N120IHLWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NGTB20N120IHLWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NGTB20N120IHLWG Features

  • 1200V collector-emitter voltage rating.
  • 40A maximum collector current.
  • Low saturation voltage using trench technology.
  • Low switching loss reduces power dissipation.
  • TO-247-3 through-hole package.

NGTB20N120IHLWG Applications

  • Suitable for inductive heating.
  • Used in consumer appliances.
  • Optimized for soft switching.
  • Designed for demanding switching.

NGTB20N120IHLWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NGTB20N120IHLWG?

The maximum collector-emitter voltage is 1200 V.

What is the maximum collector current at 25°C?

The maximum collector current at 25°C is 40 A.

What is the typical collector-emitter saturation voltage?

The typical collector-emitter saturation voltage is 1.80 V at 15V and 20A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the package type?

The package type is TO-247-3.

Is this product RoHS compliant?

Yes, this product is RoHS3 Compliant.

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