| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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121 pcs
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121 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Gate Charge | |
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The NGTB15N60S1EG from On Semiconductor is an Insulated Gate Bipolar Transistor (IGBT) featuring a Non-Punch Through (NPT) Trench construction. This design provides superior performance with low on-state voltage and minimal switching loss, making it suitable for motor drive control and other hard switching applications.
Key electrical specifications include a collector-emitter voltage of 650V and a continuous collector current of 30A at 25°C (15A at 100°C). The device offers a maximum power dissipation of 117W at 25°C and features a short circuit withstand time of 5 µs. It also includes a co-packaged reverse recovery diode with a low forward voltage.
Packaged in a standard TO-220-3 configuration, the NGTB15N60S1EG is designed for through-hole mounting. Its operating junction temperature range is -55°C to 150°C, and it is RoHS3 compliant.
Typical applications include white goods appliance motor control and general-purpose inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 650V.
The continuous collector current is 30A at 25°C and 15A at 100°C.
The maximum power dissipation is 117W at 25°C.
The operating junction temperature range is -55°C to 150°C.
The NGTB15N60S1EG is supplied in a TO-220-3 package.