| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
101,000 pcs
|
101000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The NGTB15N60R2FG from ON Semiconductor is a single IGBT transistor designed for power switching applications. It features a high breakdown voltage of 600V and a continuous current capability of 24A, with a power dissipation of 54W.
This device has a saturation voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 15A collector current. Switching characteristics include a turn-on delay (Td(on)) of 70ns and a reverse recovery time (trr) of 95ns. The typical switching energy is 550µJ on and 220µJ off.
Designed for through-hole mounting, the NGTB15N60R2FG comes in a TO-220F-3FS package. It operates at temperatures up to 175°C (TJ).
This IGBT is suitable for various power electronics applications requiring efficient switching and high voltage handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 600 V.
The continuous current rating is 24 A.
The package type is TO-220F-3FS.
The maximum operating temperature is 175°C (TJ).