| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,680 pcs
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1680 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NGTB15N120IHRWG from On Semiconductor is an Insulated Gate Bipolar Transistor (IGBT) featuring a Trench Field Stop construction. This design offers superior performance in switching applications with low on-state voltage and minimal switching loss, making it well-suited for resonant or soft switching applications.
Key electrical specifications include a collector-emitter voltage of 1200V and a continuous collector current of 30A at 25°C, derating to 15A at 100°C. The device has a maximum power dissipation of 333W at 25°C. It operates within a junction temperature range of -40°C to +175°C.
This IGBT is packaged in a TO-247-3 through-hole configuration. Its features include extremely efficient trench with Fieldstop technology, low switching loss, and optimization for low case temperature in applications like IH cookers. Typical applications include inductive heating, consumer appliances, and soft switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200 V.
The continuous collector current rating at 25°C is 30 A.
The typical collector-emitter saturation voltage is 2.10 V.
The operating junction temperature range is -40°C to +175°C.
The NGTB15N120IHRWG is supplied in a TO-247-3 package.
Yes, the NGTB15N120IHRWG is RoHS3 Compliant.
Typical applications include inductive heating, consumer appliances, and soft switching.