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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
130 pcs
|
130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Current (Maximum) | |
| Current Pulsed (Maximum @ Tpulse limited by TJmax) | |
| Current Pulsed (Maximum) | |
| Diode Forward Current (Maximum @ TC=100 °C) | |
| Diode Forward Current (Maximum @ TC=25 °C) | |
| Diode Pulsed Current | |
| Gate Charge | |
| Gate Leakage Current | |
| Gate-Emitter Threshold Voltage | |
| Input Type | |
| Lead Temperature for Soldering | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ TC=100 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (Typical @ off) | |
| Td (on | |
| Td (on/off) @ 25°C | |
| Test Condition | |
| Thermal Resistance Junction To Case (Typical @ for Diode) | |
| Thermal Resistance Junction To Case (Typical @ for IGBT) | |
| Thermal Resistance Junction-to-Ambient | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| current (Maximum @ TC = 100 °C) | |
| ices (Maximum @ VGE = 0 V, VCE = 1200 V) | |
| ices (Maximum @ VGE = 0 V, VCE = 1200 V, TJ = 150 °C) | |
| vcesat (Maximum @ VGE = 15 V, IC = 15 A) |
The NGTB15N120IHLWG is an Insulated Gate Bipolar Transistor (IGBT) from On Semiconductor, designed for demanding switching applications. It features a robust Field Stop (FS) Trench construction, offering superior performance with low on-state voltage and minimal switching loss. This IGBT is well-suited for resonant or soft switching applications.
Key electrical specifications include a collector-emitter voltage of 1200V and a continuous collector current of 30A at 25°C, derating to 15A at 100°C. The power dissipation is rated at 156W at 25°C. It has a low saturation voltage (VCEsat) of 2.2V at 15V/15A and a gate-emitter threshold voltage of 5.5V.
The device is housed in a TO-247-3 package with through-hole mounting. It operates within a junction temperature range of -55°C to 150°C. The IGBT is designed with features like low gate charge and optimized performance for low case temperature applications, such as IH cooker applications.
Typical applications include inductive heating, consumer appliances, and soft switching circuits. The device is Pb-Free compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200 V.
The continuous collector current at 25°C is 30 A.
The maximum power dissipation at 25°C is 156 W.
The operating junction temperature range is -55°C to 150°C.
The package type is TO-247-3 with through-hole mounting.
This component is RoHS3 Compliant.