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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,100 pcs
|
17100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The NGTB10N60FG from ON Semiconductor is a single Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It offers a high collector-emitter voltage rating of 600V and a continuous collector current of 20A, with a power dissipation of 40W.
This IGBT features a TO-220F-3FS package, suitable for through-hole mounting. Key electrical characteristics include a Vce(on) of 1.7V at 15V and 10A, a gate charge of 55 nC, and a reverse recovery time of 70 ns. The operating temperature range is up to 150°C (TJ).
With its robust specifications, the NGTB10N60FG is suitable for various power electronics designs requiring reliable switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600V.
The continuous collector current is 20A.
The power dissipation is 40W.
The operating temperature is up to 150°C (TJ).
The NGTB10N60FG is supplied in a TO-220F-3FS package.
The NGTB10N60FG is mounted using the through-hole method.