NGTB05N60R2DT4G The On Semiconductor NGTB05N60R2DT4G is a Reverse Conducting Insulated Gate Bipolar Transistor (RC-IGBT) designed for applications requiring integrated IGBT and Fast Recovery Diode functionality. It features a 600V breakdown voltage and 8A continuous collector current.
Mfr Part #:

NGTB05N60R2DT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NGTB05N60R2DT4G is a Reverse Conducting Insulated Gate Bipolar Transistor (RC-IGBT) designed for applications requiring integrated IGBT and Fast Recovery Diode functionality. It features a 600V breakdown voltage and 8A continuous collector current.
Total Stock: 12,500 pcs
$ Price Range: $0.99

NGTB05N60R2DT4G Available from 1 distributor

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NGTB05N60R2DT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector - Emitter Saturation Voltage
Collector Current (Continuous) @ Tc=100°C
Collector-Emitter Voltage (Max)
Mounting Type
Reverse Recovery Time
Tape & Reel

NGTB05N60R2DT4G Description

Short technical summary and product information.

The NGTB05N60R2DT4G from On Semiconductor is a high-performance Reverse Conducting Insulated Gate Bipolar Transistor (RC-IGBT). This device integrates an IGBT and a Fast Recovery Diode (FRD) onto a single chip, offering reduced package size and improved thermal balance compared to discrete components. It is designed for applications such as refrigerator compressors and fan motors, particularly those operating at higher frequencies.

 

The RC-IGBT utilizes ON Semiconductor's FS2 construction, known as RC2-IGBT, which enhances switching speed. This specific model boasts a 600V collector-emitter voltage rating and a continuous collector current of 8A at a case temperature of 100°C. The typical forward voltage drop is 1.65V at 5A, contributing to lower conduction losses. The integrated FRD offers a typical reverse recovery time (trr) of 75ns.

 

Packaged in a DPAK surface-mount form factor, the NGTB05N60R2DT4G is suitable for compact designs. Its integrated nature makes it ideal for inverter circuits where both IGBT and FWD functionalities are needed, simplifying circuit design and improving reliability. The device is part of a product series optimized for miniaturization and high-speed switching applications.

NGTB05N60R2DT4G Quick Information

Product Type: IGBT Transistor
Series: RC2-IGBT
Canonical Name: Reverse Conducting Insulated Gate Bipolar Transistor
Subcategory: Single IGBT

NGTB05N60R2DT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NGTB05N60R2DT4G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NGTB05N60R2DT4G Features

  • Integrated IGBT and Fast Recovery Diode.
  • 600V collector-emitter voltage rating.
  • 8A continuous collector current at 100°C.
  • 75ns typical reverse recovery time.
  • DPAK surface-mount package.

NGTB05N60R2DT4G Applications

  • Ideal for refrigerator compressor drives.
  • Suitable for fan motor applications.
  • Used in inverter circuit designs.
  • Optimized for high-frequency switching.

NGTB05N60R2DT4G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NGTB05N60R2DT4G?

The maximum collector-emitter voltage is 600V.

What is the continuous collector current rating at 100°C case temperature?

The continuous collector current rating at 100°C is 8A.

What is the typical forward voltage drop at 5A?

The typical forward voltage drop is 1.65V at 5A.

What is the typical reverse recovery time?

The typical reverse recovery time is 75ns.

What package type is the NGTB05N60R2DT4G supplied in?

The NGTB05N60R2DT4G is supplied in a DPAK package.

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