NGD18N45CLBT4G
On Semiconductor
The ON Semiconductor NGD18N45CLBT4G is an insulated gate bipolar transistor designed for high-power applications. It features a 500V voltage rating and 18A current capacity.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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| On Request | On Request | 30 | On Request | On Request | On Request | On Request | On Request |
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The Littelfuse Inc. NGD18N45CLBT4G is a single Insulated Gate Bipolar Transistor (IGBT) with a voltage rating of 500V and a continuous collector current of 18A. It offers a power dissipation of 115W and a low saturation voltage of 2.3V at 4.5V gate-source voltage and 7A collector current.
This IGBT is designed for surface mount applications, utilizing the TO-252-3, DPak (2 Leads + Tab), SC-63 package. The operating temperature range is from -55°C to 175°C (TJ). It features logic-level input and a turn-on delay time of 420ns/2.9µs.
Key electrical characteristics include a test condition of 300V, 1kOhm, and 5V. The NGD18N45CLBT4G is suitable for various power switching applications where high voltage and current handling are required in a compact surface-mount form factor.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NGD18N45CLBT4G has a voltage rating of 500V.
The NGD18N45CLBT4G has a current rating of 18A.
The power dissipation for the NGD18N45CLBT4G is 115W.
The operating temperature range is -55°C to 175°C (TJ).
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The RoHS Status is RoHS3 Compliant.