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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| Vce(on) (Max) @ Vge, Ic | |
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The NGB8207ABNT4G from ON Semiconductor is a single Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component offers a robust voltage rating of 365V and a continuous current capacity of 20A, with a power dissipation of 165W.
It is designed with a logic input type and a saturation voltage of 2.2V at 3.7V gate-emitter voltage and 10A collector current. The operating temperature range is from -55°C to 175°C (TJ), making it suitable for harsh environments.
Packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (D2PAK) format, the NGB8207ABNT4G is designed for surface mounting. This configuration facilitates integration into various electronic circuits requiring efficient power switching.
Compliance information indicates RoHS3 compliance, a Moisture Sensitivity Level (MSL) of 1, and REACH unaffected status. However, these compliance details are based on available database information and may require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 365V.
The continuous current rating is 20A.
The power dissipation is 165W.
The operating temperature range is -55°C to 175°C (TJ).
It is in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
It is a surface mount device.