| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN Silicon Germanium (SiGe) RF transistor, part number NESG260234-T1-AZ from CEL, is suitable for medium output power amplification applications, delivering up to 1W.
Key electrical specifications include a maximum collector current of 600mA and a maximum collector-to-emitter voltage of 9.2V. The device offers a maximum power dissipation of 1.9W when mounted on a glass epoxy PWB. It operates within a recommended collector-emitter voltage range of up to 7.2V and a collector current up to 500mA.
Electrical characteristics include a typical DC current gain (hFE) of 80-180 at 100mA and 3V. RF performance highlights include a typical Linner Gain (GL) of 22 dB at 460 MHz and 19 dB at 900 MHz. The output power (Pout) is typically 30 dBm at 460 MHz with 15 dBm input power and at 900 MHz with 20 dBm input power.
The NESG260234-T1-AZ comes in a 3-pin Power MiniMold package (TO-243AA) and is designed for surface mounting. It is sensitive to electrostatic discharge, requiring appropriate handling precautions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 600 mA.
The maximum power dissipation is 1.9 W.
The typical DC current gain (hFE) is 80 to 180 at 100mA and 3V.
The NESG260234-T1-AZ is supplied in a TO-243AA package.
The NESG260234-T1-AZ is a surface mount device.