Mfr Part #:

NE85634

Mfr Name: California Eastern Laboratories

The CEL NE85634 is an NPN Silicon RF Transistor designed for high-frequency low-noise amplification. It offers low noise and high gain characteristics.

✓ Total Stock: 2 pcs

$ Price Range: $0.27

NE85634 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	2 pcs On Request	2 pcs	On Request	1	On Request	On Request	2026-02-25 06:16:38	On Request	On Request

NE85634 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	California Eastern Laboratories
Junction Temperature	150 °C
Lead Style	Gull Wing
Mounting Type	Surface Mount
SVHC Present	Not Present
Storage Temperature	-65 to +150 °C
Tape & Reel	Tape & Reel

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NE85634 Description

Short technical summary and product information.

The NE85634 from CEL is an NPN epitaxial silicon RF transistor specifically designed for high-frequency, low-noise amplification applications. It features a low noise figure (NF) of 1.1 dB typical and a high gain (Ga) of 7.5 dB typical at 1 GHz when operating at VCE = 10 V and IC = 7 mA. At higher currents (IC = 40 mA), the noise figure is 1.8 dB typical, while the power gain increases to 9.0 dB typical.

This transistor boasts a high power gain with a maximum available gain (MAG) of 10 dB typical at 1 GHz (IC = 40 mA). It is housed in a compact 3-pin power minimold package, suitable for surface mounting. The device has a total power dissipation of 1.2 W when mounted on a suitable ceramic substrate.

Absolute maximum ratings include a collector-to-base voltage of 20 V, collector-to-emitter voltage of 12 V, and emitter-to-base voltage of 3.0 V. The collector current is rated up to 100 mA. The junction temperature can reach 150 °C, with storage temperatures ranging from -65 °C to +150 °C.

NE85634 Quick Information

Product Type: RF Transistor

Series: NE856

Canonical Name: NE85634 NPN Silicon RF Transistor

Subcategory: RF Transistor

NE85634 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NE85634 Estimated Pricing

Qty	Low	High
1+	$0.27	$0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

NE85634 Features

Low noise figure of 1.1 dB typical.
High power gain of 9.0 dB typical.
Suitable for high-frequency amplification.
Compact 3-pin power minimold package.
Maximum power dissipation of 1.2 W.

NE85634 Applications

Ideal for low-noise RF amplifiers.
Used in high-frequency signal chains.
Suitable for RF front-end circuits.
General purpose RF amplification.

NE85634 FAQs

7 frequently asked questions generated from this part’s specifications.

What are the maximum voltage ratings for the NE85634?

The maximum collector-base voltage is 20V, collector-emitter voltage is 12V, and emitter-base voltage is 3V.

What package does the NE85634 come in?

The NE85634 is available in a 3-Pin Power Minimold surface mount package.

What is the operating temperature range of the NE85634?

The maximum junction temperature is 150°C and the storage temperature range is -65°C to +150°C.

What is the DC current gain of the NE85634?

At VCE=10V, IC=20mA, the DC current gain ranges from 50 to 250, with a typical value of 120.

What is the noise figure of the NE85634 at 1GHz?

At VCE=10V, IC=7mA, the typical noise figure is 1.1dB; at IC=40mA, it is 1.8dB typical, 3dB maximum.

How is the NE85634 packaged for shipping?

The NE85634 is supplied in Tape & Reel packaging with a standard quantity of 1000 pieces per reel.

What is the power dissipation rating?

Maximum total power dissipation is 1.2W when mounted on a 16 cm² x 0.7 mm ceramic substrate.