| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The CEL NE85633L-A is an NPN silicon RF transistor suitable for amplifier and oscillator applications. It offers a high gain bandwidth product of 7 GHz and a low noise figure of 1.4 dB at 1 GHz, making it suitable for wide dynamic range applications.
This transistor operates with a collector-emitter breakdown voltage of 12V and can handle a maximum collector current of 100mA. The DC current gain (hFE) is a minimum of 50 at 20mA and 10V. It has a maximum power rating of 200mW and an operating temperature up to 150°C.
The NE85633L-A is supplied in a surface mount SOT-23-3 package (TO-236-3, SC-59). Its compact size and surface mount capability make it ideal for integration into various RF circuits where space is a consideration.
Key specifications include a transition frequency of 7GHz, a noise figure of 1.4dB at 1GHz, and a gain of 9dB. The part is listed with RoHS3 compliance and an MSL of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency (fT) of the NE85633L-A is 7 GHz.
The typical noise figure for the NE85633L-A at 1 GHz is 1.4 dB.
The maximum collector current (Ic) for the NE85633L-A is 100mA.
The NE85633L-A is supplied in a SOT-23-3 package.
The operating temperature for the NE85633L-A is up to 150°C (TJ).
The NE85633L-A is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NE85633L-A is 1.