NE85630-T1-A The CEL NE85630-T1-A is an NPN RF transistor in a SOT-323 package. It offers a transition frequency of 4.5GHz and a maximum collector current of 100mA.
Mfr Part #:

NE85630-T1-A

Available from 1 distributors
Mfr Name: Renesas
Renesas
The CEL NE85630-T1-A is an NPN RF transistor in a SOT-323 package. It offers a transition frequency of 4.5GHz and a maximum collector current of 100mA.
✓ Total Stock: 226,000 pcs
$ Price Range: $0.99

NE85630-T1-A Available from 1 distributor

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NE85630-T1-A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gain
Mounting Type
Noise Figure
Operating Temperature
SVHC Present
Transistor Type

NE85630-T1-A Description

Short technical summary and product information.

The NE85630-T1-A from CEL (California Eastern Laboratories) is an NPN RF transistor designed for high-frequency applications. It comes in a compact SOT-323 surface-mount package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a transition frequency of 4.5GHz, a maximum collector current of 100mA, and a collector-emitter breakdown voltage of 12V. The transistor also exhibits a typical noise figure of 1.2dB at 1GHz and a gain of 9dB.

 

With a maximum power dissipation of 150mW and an operating junction temperature of up to 150°C, this component is built for demanding RF circuits. Its surface mount capability simplifies integration into printed circuit boards.

 

This transistor is categorized under Discrete Semiconductor Products, specifically within the Bipolar (BJT) - RF category. It is supplied in Cut Tape (CT) packaging.

NE85630-T1-A Quick Information

Product Type: RF Transistor
Canonical Name: NE85630-T1-A RF TRANSISTOR NPN SOT-323
Subcategory: RF Transistor

NE85630-T1-A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NE85630-T1-A Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NE85630-T1-A Features

  • NPN RF transistor in SOT-323 package.
  • 4.5GHz transition frequency for high-speed applications.
  • 100mA maximum collector current capability.
  • 12V collector-emitter breakdown voltage.
  • Surface mount for easy PCB integration.

NE85630-T1-A Applications

  • Suitable for RF amplifier circuits.
  • Used in high-frequency signal processing.
  • Ideal for compact electronic devices.
  • Applicable in wireless communication modules.

NE85630-T1-A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the NE85630-T1-A?

12V

What is the package type of the NE85630-T1-A?

SOT-323 surface-mount package

What is the maximum operating junction temperature?

150°C

What is the transition frequency of this transistor?

4.5GHz

What is the typical noise figure at 1GHz?

1.2dB

What is the DC current gain (hFE) at 7mA and 3V?

40 minimum

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