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NE800196 The NEC NE800196 is a C-Band Medium Power GaAs MESFET designed for broadband applications. It offers a typical output power of 29 dBm and a gain of 8 dB at 7.2 GHz.
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NE800196

Available from 1 distributors
Mfr Name: NEC
NEC
The NEC NE800196 is a C-Band Medium Power GaAs MESFET designed for broadband applications. It offers a typical output power of 29 dBm and a gain of 8 dB at 7.2 GHz.
✓ Total Stock: 1 pcs
$ Price Range: $1.20

NE800196 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
1 pcs
On Request
1 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NE800196 Specifications Quick View

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NE800196 Description

Short technical summary and product information.

The NE800196 from NEC is a C-Band Medium Power GaAs MESFET, part of the NE8000 series. This component is designed for broadband capability and is available in hermetic packages or as a chip.

 

Key electrical specifications include a typical output power (PidB) of 29 dBm and a typical gain (GidB) of 8 dB, both measured at a frequency of 7.2 GHz. The typical drain-source voltage (Vds) is 9 V at this frequency.

 

This MESFET is suitable for applications requiring reliable performance in the C-band frequency range. Its robust construction and availability in different package options cater to various design needs.

NE800196 Quick Information

Product Type: GaAs MESFET
Series: NE8000 Series
Canonical Name: NE800196 C-Band Medium Power GaAs MESFET
Subcategory: Medium Power

NE800196 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NE800196 Estimated Pricing

Qty Low High
1+ $1.20 $1.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

NE800196 Features

  • Output power 29 dBm at 7.2 GHz.
  • Gain 8 dB at 7.2 GHz typical.
  • Drain-source voltage 9 V typical.
  • C-Band medium power GaAs MESFET.
  • Available in hermetic package or chip.

NE800196 Applications

  • C-band RF power amplifier stages.
  • Microwave communication transmitter chains.
  • High-reliability RF subsystems.

NE800196 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the output power of the NE800196?

The typical output power is 29 dBm at 7.2 GHz.

What is the gain of the NE800196?

The typical gain is 8 dB at 7.2 GHz.

What is the operating frequency of the NE800196?

The typical operating frequency is 7.2 GHz.

What is the drain-source voltage for the NE800196?

The typical drain-source voltage is 9 V.

What package options are available for the NE800196?

The NE800196 is available in hermetic packages and as a bare chip.

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