| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present |
The NEC NE76084S is a high-performance N-Channel Gallium Arsenide (GaAs) Metal Semiconductor Field-Effect Transistor (MESFET) specifically engineered for low noise amplification in the C to Ku frequency bands.
Key electrical specifications include a minimum breakdown voltage of 5V and a power dissipation rating of 240mW. The device is designed to operate reliably at high temperatures, with a maximum operating temperature of 175°C.
This RF FET is suitable for various high-frequency applications requiring low noise amplification. Its construction and material properties are optimized for performance in the specified frequency range.
Further details regarding package type, mounting, and specific application circuits would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 5V.
The maximum operating temperature is 175°C.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.