| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Tape & Reel |
The CEL NE721S01 is a Gallium Arsenide (GaAs) MESFET transistor suitable for applications in the C to X frequency bands. It is designed for use in low noise amplifiers and oscillators.
Key electrical characteristics include a typical gain of 12 dB at 4 GHz and a low noise figure of 0.9 dB at 4 GHz. The device also offers a power gain of 6 dB at 12 GHz and an output power of 15 dBm at 12 GHz (1 dB compression). It operates with a drain to supply voltage of 5V and has a continuous drain current of 120 mA.
The transistor features a 0.8 µm recessed gate and is fabricated using triple epitaxial technology with ion implantation for improved performance. Its low phase noise and high fT make it suitable for oscillator applications, such as in digital Low Noise Blocks (LNBs).
The NE721S01 is housed in an SO-1 SMD/SMT package and is available in tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical gain of the NE721S01 at 4 GHz is 12 dB.
The noise figure of the NE721S01 at 4 GHz is 0.9 dB.
The maximum drain to supply voltage for the NE721S01 is 5 V.
The NE721S01 is in an SO-1 package.
The NE721S01 is mounted using the SMD/SMT style.