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NE72084 The NEC NE72084 is a general-purpose GaAs MESFET designed for RF applications. It offers low noise figure and high gain through 8 GHz.
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NE72084

Available from 1 distributors
Mfr Name: NEC
NEC
The NEC NE72084 is a general-purpose GaAs MESFET designed for RF applications. It offers low noise figure and high gain through 8 GHz.
✓ Total Stock: 4,445 pcs

NE72084 Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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4,445 pcs
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4445 pcs On Request 1 On Request On Request 24+ On Request On Request
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NE72084 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Frequency
SVHC Present
Storage Temperature
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NE72084 Description

Short technical summary and product information.

The NEC NE72084 is a low-cost, recessed gate GaAs FET designed for general-purpose RF applications. It provides a low noise figure and high gain performance up to 8 GHz.

 

Key electrical specifications include a maximum Drain to Source Voltage (VDSS) of 5V, a maximum Gate to Drain Voltage (VGDO) of -6V, and a maximum Gate Current (IGF) of 4mA. The device is rated for a channel temperature of 175°C and a storage temperature range of -65°C to +150°C.

 

This GaAs MESFET is suitable for various RF circuit designs requiring reliable performance in the specified frequency range. Its characteristics make it a component for applications demanding good gain and low noise.

 

Further details regarding package type, mounting, and specific application circuits would typically be found in the manufacturer's datasheet.

NE72084 Quick Information

Product Type: GaAs MESFET
Canonical Name: NE72084 GaAs MESFET
Subcategory: RF MESFET

NE72084 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NE72084 Features

  • General purpose GaAs MESFET.
  • Low noise figure and high gain.
  • Operates through 8 GHz frequency.
  • Maximum drain to source voltage 5V.
  • Maximum gate current 4mA.

NE72084 Applications

  • Low noise RF amplifier circuits.
  • High gain through 8 GHz.
  • Microwave signal amplification.
  • General purpose GaAs FET use.
  • RF front-end receiver stages.

NE72084 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the NE72084?

5 V

What is the maximum gate current?

4 mA

What is the maximum channel temperature?

175 °C

What is the storage temperature range?

-65 to +150 °C

What is the frequency range of the NE72084?

Up to 8 GHz

What is the maximum gate-to-drain voltage?

-6 V

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