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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CEL NE68033 is a high-frequency RF Bipolar Transistor featuring an NPN polarity. It is designed to operate at frequencies up to 2 GHz, making it suitable for various RF applications.
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 10V, an Emitter-Base Voltage (VEBO) of 1.5V, and a Continuous Collector Current of 0.035A. The device has a maximum DC Current Gain (Hfe) of 250 and a Gain Bandwidth Product (Ft) of 10 GHz. Power dissipation is rated at 200 mW.
This transistor operates within a temperature range of -65°C to +150°C. It is manufactured using Silicon (Si) technology and comes in a compact SOT-23 surface-mount package, supplied on a reel.
The NE68033 is classified under RF Bipolar Transistors and is a single-configuration device.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NE68033 transistor operates at frequencies up to 2 GHz.
The maximum Collector-Emitter Voltage (VCEO) for the NE68033 is 10 V.
The NE68033 transistor is available in a SOT-23 package.
The NE68033 operates between -65°C and +150°C.
The NE68033 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NE68033 is 1 Unlimited.