| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The NE64535 from NEC is an NPN silicon transistor engineered for low-noise amplifier applications. It is designed to operate effectively in Class A amplifier circuits up to a frequency of 4.0 GHz.
Key electrical characteristics include a typical noise figure (NF) of 1.6 dB measured at 2 GHz and a typical S21 gain of 11 dB, also at 2 GHz. The transistor features a high transition frequency (fT) of 8.5 GHz, indicating its suitability for high-frequency operations.
The device is housed in a .085 4L SQ package style. Its low noise characteristics make it suitable for sensitive RF amplification stages in various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical noise figure (NF) for the NE64535 transistor is 1.6 dB at 2 GHz.
The typical S21 gain of the NE64535 transistor is 11 dB at 2 GHz.
The NE64535 transistor is designed for low noise class A amplifier applications up to 4.0 GHz.
The NE64535 transistor has a typical transition frequency (fT) of 8.5 GHz.
The package style for the NE64535 transistor is .085 4L SQ.