| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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168 pcs
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168 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The Renesas NE4210S01-T1B is a small signal N-channel MOSFET suitable for RF applications. This component features a technology type of HFET and is designed to operate at frequencies up to 12GHz.
Key electrical characteristics include a voltage rating of 2V and a current rating of 10 mA, with a specific current rating of 15mA. It offers a gain of 13dB and a noise figure of 0.5dB. The device is housed in a 4-SMD package, with the supplier specifying a general SMD package type.
This MOSFET is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1. Its compact SMD package makes it suitable for surface-mount designs where space is a consideration.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 2V.
The NE4210S01-T1B is supplied in a 4-SMD package.
This MOSFET operates at a frequency of 12GHz.
The noise figure is 0.5dB.