| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,298 pcs
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2298 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The Renesas NE3515S02-T1C-A is a high-frequency HFET transistor designed for RF applications. It features a low noise figure of 0.3dB and a gain of 12.5dB, making it suitable for sensitive signal amplification stages.
This device operates at frequencies up to 12GHz and can handle a power output of 14dBm. The current rating is 88mA with an operating voltage of 2V. The transistor is housed in a 4-SMD, Flat Leads package, designed for surface mount applications.
Its pseudomorphic HEMT technology ensures excellent performance characteristics for demanding RF circuits. The S02 supplier device package facilitates integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 2V.
The noise figure is 0.3dB.
This transistor operates at frequencies up to 12GHz.
It is available in a 4-SMD, Flat Leads package.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.