| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Current Rating (Amps) | |
| Frequency | |
| Gain | |
| Noise Figure | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The Renesas NE3513M04-T2B-A is a small signal N-channel RF MOSFET designed for high-frequency applications. It utilizes GaAs HJ-FET technology and offers a gain of 13dB at 12GHz.
Key electrical characteristics include a current rating of 60mA and a power dissipation of 125mW. The device exhibits a low noise figure of 0.65dB and operates at a voltage of 2V with a current of 10mA.
This MOSFET is housed in a 4-SMD, Flat Leads package, also referred to as 4-Super Mini Mold. Its configuration is N-Channel, making it suitable for various RF circuit designs requiring efficient signal amplification and low noise performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NE3513M04-T2B-A operates at a frequency of 12GHz.
This RF MOSFET has a gain of 13dB.
The noise figure for the NE3513M04-T2B-A is 0.65dB.
The NE3513M04-T2B-A is supplied in a 4-SMD, Flat Leads package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.