| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,700 pcs
|
1700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Current Rating (Amps) | |
| Frequency | |
| Gain | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Noise Figure | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The NE3513M04-T2-A from California Eastern Laboratories (CEL) is a Gallium Arsenide Heterojunction Field-Effect Transistor (GaAs HJ-FET) specifically designed for RF applications. This component operates at a frequency of 12GHz, offering a gain of 13dB and a low noise figure of 0.65dB. It has a power rating of 125mW and a current rating of 60mA, with a typical operating current of 10mA at 2V.
The transistor is housed in a compact SOT-343F surface-mount package, identified by the supplier as M04. Its N-Channel configuration and GaAs HJ-FET technology make it suitable for various RF circuits requiring high performance and low noise.
This device is listed as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited. Its small footprint and specific electrical characteristics make it a candidate for integration into RF front-ends, amplifiers, and other high-frequency signal processing modules.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NE3513M04-T2-A operates at a frequency of 12GHz.
The gain of the NE3513M04-T2-A is 13dB.
The noise figure for the NE3513M04-T2-A is 0.65dB.
The NE3513M04-T2-A is supplied in a SOT-343F package.
The NE3513M04-T2-A is RoHS3 Compliant.