| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200,600 pcs
|
200600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gain | |
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| Voltage |
The CEL NE3509M04-T2-A is a high-performance RF FET utilizing GaAs HJ-FET technology, suitable for C to Ku band applications. This component is engineered for low noise figure and high gain, boasting a typical noise figure of 0.4 dB and an associated gain of 17.5 dB at 12 GHz. It operates with a drain-to-source voltage of 2 V and a drain current of 10 mA.
The device is housed in a compact SOT-343F (M04) package, designed for surface mounting. Absolute maximum ratings include a drain-to-source voltage of 4.0 V and a total power dissipation of 125 mW. Recommended operating conditions specify a drain-to-source voltage between 2 V and 3 V, and a drain current between 10 mA and 15 mA.
Key electrical characteristics include a transconductance ranging from 40 to 55 mS and a gate-to-source cutoff voltage between -0.2 V and -2.0 V. The NE3509M04-T2-A is suitable for applications such as DBS LNB gain stages and low-noise amplifiers in microwave communication systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical noise figure is 0.4 dB.
The associated gain is 11.5 dB.
The operating frequency is 2 GHz.
The package type is SOT-343F.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.