| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,400 pcs
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6400 pcs | On Request | 1 | On Request | On Request | 16+13+ | On Request | On Request |
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The Renesas NE3509M04 is a Hetero Junction Field Effect Transistor (HJ-FET) designed for RF applications. It features a typical noise figure of 0.4 dB and a typical gain of 17.5 dB, both measured at a frequency of 2 GHz with a drain-source voltage of 2 V and a drain current of 10 mA.
This component is categorized as a Transistor - FETs, MOSFETs - RF. While specific application details are not provided in the available data, its low noise characteristics suggest suitability for sensitive RF signal amplification stages in communication systems, test equipment, or other high-frequency designs where signal integrity is critical.
Further details regarding operating voltage, temperature range, and specific packaging information would typically be found in the product datasheet. The available compliance data indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are noted as unverified in the database.
The typical noise figure for the NE3509M04 at 2 GHz is 0.4 dB.
The typical gain of the NE3509M04 at 2 GHz is 17.5 dB.
The noise figure and gain are typically measured at 2 GHz with a drain-source voltage of 2 V and a drain current of 10 mA.
The NE3509M04 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NE3509M04 is 1 Unlimited.
The REACH status for the NE3509M04 is REACH Unaffected.