| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NE3508M04-T2-A from CEL is a Radio Frequency Field-Effect Transistor (RF FET) utilizing GaAs HJ-FET technology. This component is engineered for applications requiring high performance at radio frequencies, specifically operating at 2GHz.
Key electrical characteristics include a gain of 14dB and a low noise figure of 0.45dB, making it suitable for sensitive RF signal processing. It has a current rating of 120mA and operates at a voltage of 2V. The power handling capability is rated at 18dBm.
The transistor is supplied in a SOT-343F package, identified by the supplier device package code F4TSMM, M04. This compact package is suitable for surface-mount designs where space is a constraint. The component is designed for RF applications, offering efficient signal amplification and low noise.
CEL, California Eastern Laboratories, is a manufacturer focused on RF semiconductors. Their products serve designers and OEMs in various RF and wireless markets. The NE3508M04-T2-A is part of their portfolio of RF components designed for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NE3508M04-T2-A operates at 2GHz.
The NE3508M04-T2-A RF FET has a gain of 14dB.
The noise figure for the NE3508M04-T2-A is 0.45dB.
The NE3508M04-T2-A is supplied in a SOT-343F package.
The NE3508M04-T2-A operates at 2V.