| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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857 pcs
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857 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The NE3210S01-T1B from NEC is a high-performance N-Channel Hetero Junction FET (HJ-FET) designed for use in X to Ku band Super Low Noise Amplifier applications. This device utilizes hetero junction technology to achieve high mobility electrons, resulting in excellent low noise characteristics and associated gain.
Key electrical specifications include a typical noise figure of 0.35 dB and a typical associated gain of 13.5 dB at 12 GHz. The gate length is a maximum of 0.20 µm, and the gate width is 160 µm. Absolute maximum ratings include a drain-to-source voltage of 4.0 V and a gate-to-source voltage of -3.0 V. The total power dissipation is rated at 165 mW.
This component is supplied on tape and reel, with 4000 pieces per reel, making it suitable for automated assembly processes. Its excellent low noise performance makes it ideal for DBS and other commercial systems requiring high-gain, low-noise amplification.
The typical noise figure is 0.35 dB, with a maximum of 0.45 dB at 12 GHz (VDS = 2 V, ID = 10 mA).
The typical associated gain is 13.5 dB at 12 GHz (VDS = 2 V, ID = 10 mA).
The maximum gate length is 0.20 µm.
Maximum drain-to-source voltage is 4.0 V, gate-to-source voltage is –3.0 V, drain current is 100 mA, gate current is 100 µA, and total power dissipation is 165 mW.
The typical drain-to-source voltage is 2 V, with an absolute maximum rating of 4.0 V. The gate-to-source voltage maximum is –3.0 V.
The storage temperature range is –65°C to +125°C, and the maximum channel temperature is 125°C.
The typical saturated drain current is 154 mA at VDS = 2 V, VGS = 0 V.