| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NDT455N is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor. It features a high-density cell design for extremely low RDS(ON) and superior switching performance.
Key electrical specifications include a drain-source voltage of 30V, a continuous drain current of 11.5A, and a maximum power dissipation of 3W. The static drain-source on-resistance is as low as 0.015 Ohms at 11.5A and 10V Vgs. The gate threshold voltage is 3V maximum at 250µA.
This MOSFET is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. It offers high power and current handling capability in a widely used surface mount package.
The NDT455N is available in a TO-261-4, TO-261AA (SOT-223-4) package, designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage of the NDT455N is 30V.
The continuous drain current for the NDT455N is 11.5A.
The maximum power dissipation of the NDT455N is 3W.
The operating temperature range for the NDT455N is -65°C to 150°C.
The NDT455N is available in a TO-261-4, TO-261AA (SOT-223-4) package.
The Rds On for the NDT455N is a maximum of 0.015 Ohms at 11.5A and 10V Vgs.
The gate threshold voltage of the NDT455N is a maximum of 3V at 250µA.